Non-Adiabatic Fast Quantum Memory on an Atom-Resonator System Provided by Optimal Switching on a Control Field

Abstract

The efficiency of non-adiabatic quantum memory based on the Raman interaction between a photon and a three-level atom in a high-Q resonator was investigated. The optimum gradual switch-on form of a control field ensures high efficiency of the fast quantum memory is found. Proposals for improving the basic parameters of the considered quantum memory using realistic experimental parameters are shortly discussed.